Effects of dot height uniformity on the performance of 1.3 /spl mu/m InAs quantum dot lasers

We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 /spl mu/m QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.