Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was /spl sim/1072 cm/sup 2//V/spl middot/s, which is /spl sim/35% higher than that extracted from reported "universal curve" for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At /spl sim/243 cm/sup 2//V/spl middot/s, no enhancement in hole effective mobility was observed.