Germanium-diffused waveguides in silicon for lambda =1.3 mu m and lambda =1.55 mu m with losses below 0.5 dB/cm

The authors present a simple technique for the fabrication of integrated optical channel waveguides that are prepared by indiffusion of an E-beam evaporated amorphous alloy of germanium and silicon into commercially available silicon with low dopant concentration, using only simple technological processes such as standard lithography, PVD, and diffusion. The waveguides are polarization independent and have waveguide losses as low as 0.3 dB/cm at wavelengths of lambda =1.3 mu m and lambda =1.55 mu m. The spot sizes are well suited for low-loss single-mode fiber device coupling, being on the order of a few microns in both horizontal and vertical directions.<
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