A novel dispersion control in CE chips by /spl zeta/-potential variation using field-effect

The paper proposes a new technique, which varies the zeta potential along the channel walls in the vicinity of the microchannel corners in such as a way as to minimize the effects of turn-induced dispersion within U-shaped separation channels. The results for the folded square U-shaped separation channel indicate that boundary control of the zeta potential by field-effect significantly reduces the band dispersion induced by the 90/spl deg/ turns. Finally, the results confirm that application of the proposed localized zeta potential variation method results in a correction of the band tilting phenomenon and a reduction in the racetrack effect.