Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA

Hot-carrier stress impact on the analogue/RF performances of a state-of-the-art 90nm RF-CMOS technology, demonstrated on RF-circuits operating up to 5Ghz, is shown for the first time in a 900MHz LNA biased in moderate inversion. The trade-off between low-power consumption and lifetime is discussed, addressing limitations and pointing to possible solutions.