AlInGaAs 0.8-/spl mu/m high-power semiconductor lasers with delta-doped resonant tunneling quantum wells

In this paper, we describe a new structure design for producing low-threshold high-efficiency and high-brightness 0.807-/spl mu/m lasers. In this structure, we incorporate a self-discriminating weak optical confinement asymmetrical waveguide, and an active region based on single or double AlInGaAs quantum well (QW) with Te n-type /spl delta/-doping. Optimized coupling between the /spl delta/-doping layer and the double QW, along with waveguide and doping profile optimization, yields J/sub th/=140 A/cm/sup -2/ per QW, a far-field angle of /spl sim/24/spl deg/, and M/sup 2/ close to one.