A 90 nm 512 Mb 166 MHz multilevel cell flash memory with 1.5 MByte/s programming

A 2b/cell flash memory in 90 nm triple-well CMOS technology achieves 1.5 MB/s programming and 166 MHz synchronous operation. The design features 2-row programming, optimized program control hardware, 3 transistor x-decoder with negative deselected rows and configurable output buffers. The die is 42.5 mm/sup 2/ with a cell size of 0.076 /spl mu/m/sup 2/.