Localization of NBT hot carrier-induced oxide damage in SOI pMOSFETs

The NBTI-like hot carrier (HC) degradation of SOI pMOSFETs was investigated. The generated N/sub it/ inside the channel region is the dominant mechanism of NBTI for SOI pMOSFETs due to the poor thermal conductivity of the buried oxide. However, for the NBTI-like HC stressing, the generated N/sub it/ inside the drain and source region is dominant due to the combined HC and NBTI, respectively. A hole trapping model was proposed to explain both the electron and hole component increases during stressing and the activation energy has also been extracted. It was observed that NBTI-like stress was the worst case degradation in SOI pMOSFETs.