Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs

A novel method for characterizing MOSFET with HfSiON high-k gate dielectric is demonstrated for the first time by direct measurement of single-electron de-trapping. Individual high-k trapped electron emission is recorded, which is manifested by the step-like evolution of channel current. The physical path of electron de-trapping can be identified from the emission time of such single-electron de-trapping. The dependence of charge emission time on gate voltage and temperature is measured. An analytical model based on thermally assisted tunneling can predict the emission time behavior, trap activation energy, trap density, and total available traps in high-k gate dielectric.