A 5.4-mW LNA using 0.35- /spl mu/m SiGe BiCMOS technology for 3.1-10.6-GHz UWB wireless receivers

A modified low-power and low-noise distributed amplifier for ultra-wideband (UWB) radio systems is first proposed to overcome the bottleneck of conventional DA. The UWB LNA achieves 10-dB gain with 5.4-mW power consumption, and 3-dB roll-off up to 10.6 GHz. The measured noise figures are lower than 5.5 dB from 3.1 to 10.6 GHz with 1.5 V supply. The output P/sub 1dB/ is -5.8 dBm and input IP3 is -4 dBm from 1.5-V supply. The MMIC occupies total chip size of only 0.47 mm/sup 2/ including all testing pads.