Surface texturing of silicon by hydrogen radicals

This paper presents a new texturing method for crystalline Si surface using hydrogen radicals generated by tungsten hot filament. The surface of after hydrogen radical treatment showed wide variation of surface morphology, depending on etching conditions. Feature size of the texture structure much depended on the reaction pressure. Inverted pyramid texture structure was obtained at 800 /spl deg/C, 0.1 Torr. Reflectance spectra of textured Si without AR coatings showed very low surface reflectance of less than 3% in the range of 900 nm to 200 nm.