Native and radiation induced defects in lattice mismatched InGaAs and InGaP

The native and radiation induced defects in lattice mismatched In/sub 0.16/GaAs and In/sub 0.56/Ga/sub 0.44/P are investigated. Subjecting lattice mismatched In/sub 0.16/GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from deep level transient spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1 MeV electron irradiation is presented and compared to data from lattice mismatched In/sub 0.56/Ga/sub 0.44/P devices.