A scalable trench etch based process for high voltage vertical RESURF MOSFETs

In this work, for the first time, vertical RESURF MOSFETs manufactured using a trench etch and vapor phase doping process depict a breakdown voltage above 300V. We prove that this concept is scalable to a much higher breakdown voltage range. The device features a record low specific resistance of 0.98/spl Omega/mm/sup 2/ with a breakdown voltage of 473V. This best result to-date for any superjunction technology proves to be a good alternative to the multi-epitaxy technique commercially in use.