An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel

An In
0.52
Al
0.48
As/n
⁺
-In
0.53
Ga
0.47
As MIS-type field-effect transistor (FET) with a channel doped at a 7 × 10
¹⁷
cm
^-3
level has been fabricated on an InP substrate. A device with a 2-µm channel length has yielded a maximum transconductance of 152 mS/mm,
f_{T} = 12.4
GHz, and
f_{\max} = 50
GHz. At 10 GHz, the maximum available gain is 17.4 dB. The performance of this device shows that heavily doped channel FET's are very promising for high-frequency operation.