Modeling of substrate current in p-MOSFET's

It is shown that the substrate current characterization method and modeling approach used for n-MOSFET's is also applicable to p-MOSFET's. The impact ionization rate extracted for holes is found to be 8 × 10
⁶
exp (-3.7 × 10
⁶
/E), where E is the electric field. Based on our measurement and modeling result, roughly twice the channel electric field is required for p-MOSFET's to generate the same amount of substrate current as n-MOSFET's. The hot-carrier-induced breakdown voltage is therefore also about two times larger.