A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's

We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility of MODFET- or MESFET-compatible single-transistor buried-well dynamic RAM's capable of operating at or above room temperature.