Thin polyoxide films grown by rapid thermal processing

The growth of thin (80-200 Å) oxide films by rapid thermal processing (RTP) on LPCVD poly and amorphous silicon is reported. Oxide growth kinetics are affected by dopant concentration, implant species, and preoxidation anneal conditions. Breakdown fields > 11 MV/ cm have been measured. Constant current stress measurements indicate a higher rate of negative charge trapping in oxides grown on top of polysilicon as compared to amorphous silicon.