InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's)

Stability problems in conventional InP metal-insulator-semiconductor field effect transistors (MISFET's) have been overcome in InP heterojunction insulated gate FET's (HIGFET's) by replacing the insulator with In
x
Al
1-x
As. We report on the fabrication and low-frequency operation of the HIGFET with a composition of x = 0.43. Transistor characteristics have been successfully modeled by an analytical MISFET model which indicate a low interfacial state density (≅ 10
¹¹
/cm
²
) and near flat-band condition.