Counting of deep-level traps using a charge-coupled device

Quantization in dark current generation has been observed for the first time through the use of a virtual-phase charge-coupled device. Two sites for bulk silicon dark current have been identified with capture cross sections of 1.8 × 10
^-15
cm
²
and 5.4 × 10
^-16
cm
²
, and concentrations of 1.3 × 10
⁹
cm
^-3
and 1.5 × 10
⁸
cm
^-3
, respectively.