Optimization of the drift region of power MOSFET's with lateral structures and deep junctions

The electric field profile in the drift region of power MOSFET's with lateral structures and deep junctions has been found analytically. From the analysis, the best uniform surface doping density and the depth of the drift region in offset-gate power MOSFET's that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. Design guidelines for such MOSFET's are proposed. The comparison with computer simulation results has shown that it is reasonable for some practical structures.