A three-section model for computing I-V characteristics of GaAs MESFET's

A new model of the GaAs MESFET is proposed by dividing the MESFET into three sections that may be replaced with the resistance (R2) and the voltage-dependent current sources I
1
and I
3
. In order to show the general fitness of this model, two different real devices with low and high pinchoff voltages, respectively, are simulated. The results obtained from the simulation are compared with those of the complete velocity saturation model and the square-law model, as well as experimental data. The results of this model agree better with the experimental data than those of the other two models, i.e., the complete velocity saturation model and the square-law model.