An improved method of MOSFET modeling and parameter extraction

A method is presented to accurately determine MOSFET modeling parameters from a single linear region (V
DS
< 2k
BT/q
)I
D
- V
GS
measurement based on the operation of a single transistor in the strongly inverted regime. The intrinsic values of the surface scattering parameter θ
s
and the transistor gain β
0
may be separated from the series resistance R
s
and drain bias V
DS
effects while including band bending beyond the 2φ
F
point. The mobility (excluding surface scattering effects), threshold voltage, bulk doping, and flat-band voltage are also determined.