MINIMOS 3: A MOSFET simulator that includes energy balance

We present a model for hot carrier transport which is implemented in the device simulator MINIMOS 3. A brief resume of the model is given. We present various results which were calculated with this new model. We show that the I-V characteristics of a MOSFET can be calculated from L
eff
= 10 µm down to L
eff
= 0.9 µm with one parameter set. Modifications of carrier and current distributions are presented that show how hot carrier effects tend to smooth these distributions. Implications are discussed how a self-consistent carrier temperature can be used to model impact ionization and oxide injection.