A new MOS image sensor operating in a non-destructive readout mode

In this paper, a new MOS image sensor, named a "Charge Modulation Device", is presented for the first time. This image sensor is characterized by a non-destructive readout operation and an amplification at each pixel level. A new device structure and circuit configuration, suitable for a high packing density array and high speed operation, are proposed. An image sensor of 210(H) × 165(V) pixels was fabricated and evaluated.