A lateral COMFET made in thin silicon-on-insulator film

Lateral conductivity-modulated FET's (COMFET's) have been fabricated using a silicon-on-insulator (SOI) CMOS process. High-speed low-voltage CMOS and medium-voltage COMFET's have thus been produced on the same chips. The COMFET's have a 80-V blocking capability in both the forward and reverse modes. Turn-off times of a few microseconds are obtained, which is comparable to values obtained in bulk COMFET's. Due to the thinness of the silicon film in which the devices are made, the linear current density is limited to approximately 10 µA/µm.