A novel contact process for power MOSFET's

A novel technique of making electrical contact to the p diffusions of a DMOS power transistor by over-sintering the aluminum/ silicon contact is reported. The potential advantages are the elimination of a critical masking step and smaller cell size. Test devices showed somewhat higher contact resistances to the n and p diffusions than achievable by the conventional process. Good I-V characteristics and yield were obtained over a wide range of contact process conditions.