A new oxidation-resistant self-aligned TiSi2process

This paper presents a thin amorphous Si (a-Si) on Ti as an oxidation-resistant material for a self-aligned TiSi
2
process. It is shown that a thin a-Si over Ti film will greatly suppress the interaction between Ti and ambient gases (N
2
and O
2
) during the thermal TiSi
2
formation cycle in conventional N
2
furnance while maintaining satisfactory self-aligned property after silicidation at a temperature below 630°C.