The electrical properties of subquarter-micrometer gate-length MOSFET's

Direct e-beam writing was used to form device patterns of subquarter-micrometer gate-length MOSFET's. The resulting devices had physical gate lengths of 0.19 µm and channel lengths of 90 nm. The gate oxide thickness was 8.3 nm. In the linear region, the channel conductance was found to be 130 mS/mm.V. The subthreshold slope of the device was 105 mV/decade. Due to the factors of velocity saturation, source resistance, and punchthrough current contribution, the value of transconductance is lower than expected. Even though the devices were not comprehensively scaled, they showed good current driving capability.