On the temperature dependence of the 1/f noise Hooge parameter αHin n-channel Silicon JFET's

It is suggested that the temperature dependence of the empirical Hooge noise parameter α
H
deduced from recent noise measurements on n-channel Si-JFET's can be described as
\alpha_{H} \propto \exp (-T_{0}/T)
where
T_{0} = 510 \pm 130
K. The characteristic exponent might be correlated with the energy of the low-wavenumber phonons dominating the mobility through intervalley scattering.