Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's

We report enhancement- and depletion-mode p-channel modulation-doped field-effect transistors (FET's) in Si. Si/Ge
x
Si
1-x
heterostructures were grown by molecular-beam epitaxy (MBE) with one-dimensional confinement of holes at the heterostructure interfaces. Transconductances of 2.5 and 3.2 mS/mm were measured at 300 K for enhancement- and depletion-mode devices, respectively, in good agreement with transistor modeling predictions for p-channel devices using measured material parameters.