XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

Mo-gate n-channel poly-Si thin-film transistors (TFT's) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate. TFT's were fabricated in the crystallized Si film. The channel mobility of the TFT was 180cm
²
/V.s when the a-Si:H was crystallized by annealing with a laser having an energy density of 200 mJ/cm
²
. This result shows that high-speed silicon devices can be fabricated at a low temperature using XeCl excimer laser annealing.