Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifier

Monolithic integrated In
0.53
Ga
0.47
As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors (JFET's) grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and a source-follower buffer with diode level shifters. Using a 1-µm gate length, amplifiers with a gain of 12 dB have been fabricated.