Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's

Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrease in I
dss
and V
p
and an increase in R
0
. The failure mechanism was investigated by electrical and structural analyses with SEM, microprobe, and Auger spectrometry, and turns out to be a thermally activated Au-GaAs interdiffusion leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFET's and can lead to burn-out of devices.