Noise figure characteristics of 1/2-µm gate single-heterojunction high-electron-mobility FET's at 35 GHz

In this letter, we report room-temperature noise figure performance of Gallium Arsenide single-heterojunction high-electron-mobility transistors (HEMT's). We have measured a noise figure of 2 dB at 35 GHz with 5 dB of associated gain. The devices tested were 150 µm wide with 0.5-µm-long gates. The active layers were grown by molecular beam epitaxy (MBE). These values are the best reported results for either HEMT's or MESFET's at these frequencies, regardless of their geometry.