A 64K SRAM with high immunity from heavy ion induced latch-up

A 64-kbit SRAM with high latch-up immunity has been developed with the application of a well-source structure combined with an epi-substrate. Heavy-ion beam exposure tests reveal that the device has high immunity from cosmic-ray induced latch-up, and the soft-error cross section is about 8.6 × 10
^-7
cm
²
/(bit particle) for 73-MeV Ar ions.