Hot-carrier-induced degradation in p-channel LDD MOSFET's

When the p-channel MOSFET is stressed near the maximum substrate current I
sub
, the lifetime t (5-percent increase in the transconductance) follows
tI_{sub} = A(I_{sub}/I_{d})^{-n}
, with n = 2.0. A simple electron trapping model is proposed to explain the observed power law relationship. The current ratio
I_{sub}/I_{d}
and the maximum channel electric field decrease with increasing stress time, which is consistent with electron trapping in the oxide during the stress.