Planarization of gold and aluminum thin films using a pulsed laser

Micrometer-thick gold and aluminum films have been planarized by momentarily melting them with optical pulses from a dye laser. Submicrosecond pulses were used in order to minimize the temperature rise in the substrate, reduce the energy required for melting, and prevent undesirable metallurgical reactions. Planarization of two-level gold metallization structures insulated by SiO
2
(including interlevel vias) has been achieved. Aluminum metallization on integrated circuits (IC's) has also been planarized. The use of a thin (<200 Å) silicon overcoating greatly aids the aluminum planarization process by passivating the aluminum and increasing its initial optical absorbance.