Lateral HVIC with 1200-V bipolar and field-effect devices

The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of the 1200-V DMOSFET is 4 times less than its 1200-V n-p-n BJT counterpart. The major contribution to high BJT on-resistance comes from the series JFET pinch resistance.