Precise ion-implantation analysis including channeling effects

A precise channeling model is proposed for ion-implantation analysis. This channeling model includes defect scattering effects on the impurity profiles. It is restricted to only a major axial channel for simplicity and is introduced to the two-dimensional Boltzmann transport equation method in order to accurately calculate the impurity profiles. The calculations are in good agreement with experimental values at a wide range of conditions (As
⁺
and B
⁺
, 5-130 keV, 5 × 10
¹³
to 1 × 10
¹⁵
cm
^-2
). Furthermore, it is concluded that more than 2 × 10
¹⁷
cm
^-3
recoiled atoms prevent the ions from channeling in the Si target. Thus, this channeling model is precise enough to use in the design of even shallow-junctioned and fine-structured devices.