A model for the current—Voltage characteristics of MODFET's

A model for the
I-V
characteristics of MODFET's is presented. In this paper, an analytic velocity-field model is used. To more accurately describe the physical characteristics of MODFET's, the model of this paper is divided into two regions (the linear region and the saturation region), being continuous at the pinchoff voltage, and includes the diffusion component in addition to the drift component of current. Using this model, the simulated
I-V
characteristics are in excellent agreement with the experimental data.