Band discontinuities as heterojunction device design parameters

A simple model that incorporates macroscopic and microscopic effects is proposed to predict the band discontinuities that govern the electrical and optical properties of heterojunction transistors and optoelectronic devices. It is found that the band discontinuities are determined by the short-range interface dipole and the bulk effects for nondegenerate systems and the agreement with the recent experiments is good. Furthermore, the recently observed failure of common anion rule for heterojunctions is correctly predicted.