Fabrication and characterization of nonalloyed Cr/Au ohmic contacts to n- and p-type In0.53Ga0.47As

Ion implantation and rapid thermal annealing have been used to selectively produce thin high carrier concentration n- and p-type layers on In
0.53
Ga
0.47
As, and nonalloyed ohmic contacts with excellent properties have been achieved by depositing layers of Cr and Au on the implanted regions. The Cr/Au metallization is used to produce ohmic contacts on both p-type and n-type material in the same deposition. A series of electrical test patterns based on the transmission line model and four terminal structure were used to characterize the contact resistance of both alloyed and nonalloyed ohmic contact metallizations on In
0.53
Ga
0.47
As. The nonalloyed contacts to n-type material are superior to conventional alloyed contacts made in this study, while the nonalloyed contacts to p-type material are a factor of 5 higher resistance.