Effect of Hydrogen implantation on polysilicon p-n junctions

The effect of hydrogen implantation on the
I(V)
characteristics of lateral polysilicon p-n junctions is reported. After implantation with hydrogen and annealing at 400°C, a moderate decrease in the forward current and a large decrease in the reverse current is observed. In addition, the reverse breakdown voltage is increased. Best results were obtained for hydrogen dose of 10
¹⁶
cm
^-2
. The measurements are explained by considering both electric field enhancement of emission and capture rates and the generation of new trap levels by ion implantation.