A high-performance high-voltage self-aligned double-diffused lateral (SADDL) p-n-p transistor

A new lateral transistor, the self-aligned double diffused lateral (SADDL) transistor was devdoped for high-voltage linear IC's. It has a self-aligned narrow n-base to provide high h
FE
and high f
T
, and an electric field reducible p
^-
collector and electrodes to provide high BV
ceo
. It was confirmed that f
T
of the SADDL transistor was improved without deterioration of BV
ceo
by more than ten times that for other reported lateral transistors. A fabricated SADDL transistor of the 350 V class has a high h
FE
(∼100), high f
T
(∼15 MHz), and high Early voltage ( > 1000 V).