Specific contact resistivity of TiSi2to P+and n+junctions

Specific contact resistivities of the Al/TiW/TiSi
2
/Si system are characterized. It is found that without a TiW barrier layer, Al can penetrate through the TiSi
2
layer and significantly affect the TiSi
2
/Si interfacial contact resistance. Intrinsic TiSi
2
contact resistivities to n
⁺
and p
⁺
silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSi
2
contact resistivity to n
⁺
silicon is found to be about one order of magnitude lower than that of Al to n
⁺
silicon. However, TiSi
2
to p
⁺
silicon contact resistivity is higher than that of Al to p
⁺
silicon and is very sensitive to the boron implant dose.