Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor

Electron transport efficiency of an InGaAs/InP hot-electron transistor (HET) is determined by a Monte Carlo method including alloy scattering in an InGaAs base. Results are compared with those of a GaAs/AlGaAs HET. It is found that the InGaAs/InP HET offers a higher current gain than that of a GaAs/AlGaAs HET by an order of magnitude.