Axial channeling model for a two-dimensional Boltzmann transport equation method for ion implantation analysis

A precise axial channeling model is proposed for As
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ion implantation analysis. The channel ions are characterized by having smaller traveling angles to a crystal axis than the critical channeling angle. Additionally, the scattering models in the crystal channel are newly adopted. Moreover, the channeling ratio is introduced in order to take account of the effect of the defect scattering on the impurity profile. The calculated impurity profiles are in good agreement with the experimental profiles, especially in high-dose implantation. Thus, this channeling model is precise enough to make possible design of even shallow-junctioned fine-structured devices.