A new gate structure vertical-GaAs FET

A new vertical-(V-) GaAs FET exhibiting penthode-like characteristics has been developed and realized experimentally by combining reactive ion etching (RIE) and MO-CVD techniques. The unique feature of this device is the use of an insulator/metal/insulator-grating gate embedded in a GaAs single crystal. A comparison of the dc characteristics of the new device with a standard permeable base transistor (PBT) has been carried out. The improved device performance expected from this structure is discussed in detail.