Gate-bias-dependent low-frequency oscillations in GaAs MISFET's

Low-frequency oscillations at 4-100 Hz have been observed in GaAs MISFET's. The amplitude and initiation of the oscillations have been found to depend on the gate bias. The frequency of oscillations is also temperature-dependent. When this temperature dependence is plotted on an Arrhenius-type graph, an activation energy of 0.8 eV is obtained with a time constant of about 1 s at room temperature.