MBE grown n+-i-δ(p+)-i-n+GaAs V-groove barrier transistor

The three-terminal n
⁺
-i-δ(p
⁺
)-i-n
⁺
V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the δ(p
⁺
), the thin p
⁺
layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of ultra-high-frequency (
f_{r} > 30
-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.